pnp bd242 ? a ? b ? c 23/10/2012 comset semiconductors 1/3 m m e e d d i i u u m m p p o o w w e e r r l l i i n n e e a a r r a a n n d d s s w w i i t t c c h h i i n n g g a a p p p p l l i i c c a a t t i i o o n n s s . . the bd242, a, b, c are the pnp transistors mounted in jedec to-220 plastic package. they are the silicon epitaxial-base power trans istors for use in medium power linear and switching applications. the npn complements are bd241, a, b, c. compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage (i b = 0) bd242 -45 v BD242A -60 bd242b -80 bd242c -100 v cer collector-emitter voltage (r be = 100 ? ) bd242 -55 v BD242A -70 bd242b -90 bd242c -115 v ebo emitter-base voltage (i c = 0) bd242 -5.0 v BD242A bd242b bd242c i c collector current i c -3 a i cm -5 i b base current -1 a p t power dissipation @ t amb = 25 c 2 w @ t case = 25 c 40 w t j junction temperature 150 c t s storage temperature -65 to +150 thermal characteristics symbol ratings value unit r thj-amb thermal resistance, junction-ambient 62.5 c/w r thj-case thermal resistance, junction-case 3.13 c/w
pnp bd242 ? a ? b ? c 23/10/2012 comset semiconductors 2/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i ceo collector cutoff current v ce =-30 v bd242 - - -0.3 ma v ce =-30 v BD242A - - v ce =-60 v bd242b - - v ce =-60 v bd242c - - i ebo emitter cutoff current v be =-5 v bd242 - - -1.0 ma BD242A - - bd242b - - bd242c - - i ces collector cutoff current (v be = 0) v ce =-55 v bd242 - - -0.2 ma v ce =-70 v BD242A - - v ce =-90 v bd242b - - v ce =-115 v bd242c - - v ceo(sus) collector-emitter sustaining voltage (i b = 0) (*) i c =-30ma bd242 -45 v BD242A -60 bd242b -80 bd242c -100 h fe dc current gain (*) v ce =-4 v i c =-1 a bd242 25 - - - BD242A bd242b bd242c v ce =-4 v i c =-3 a bd242 10 - - BD242A bd242b bd242c v ce(sat) collector-emitter saturation voltage (*) i c =-3 a i b =-0.6 a bd242 - - -1.2 v BD242A bd242b bd242c v be(on) base-emitter voltage (*) v ce =-4 v i c =-3 a bd242 - - -1.8 v BD242A bd242b bd242c h fe small signal current gain v ce =-10 v i c =-0.5 a f = 1khz bd242 20 - - BD242A bd242b bd242c v ce =-10 v i c =-0.5 a f = 1mhz bd242 3 - - - BD242A bd242b bd242c (*) pulse width 300 s, duty cycle 2.0%
pnp bd242 ? a ? b ? c 23/10/2012 comset semiconductors 3/3 mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 revised september 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com pin 1 : base pin 2 : collector pin 3 : emitter case : collector
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